Number of Drivers :
Current - Peak Output (Source, Sink) :
Rise / Fall Time (Typ) :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Current - Peak Output (Source, Sink) Rise / Fall Time (Typ)
GLOBAL STOCKS
MAX15025EATB+T
RFQ
RFQ
3,114
In-stock
Maxim Integrated IC GATE DRVR 2CH 16NS 10TDFN - Obsolete Tape & Reel (TR) Inverting, Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) 4.5 V ~ 28 V Independent Low-Side 2 N-Channel MOSFET 2A, 4A 48ns, 32ns
MAX15025FATB+T
RFQ
RFQ
3,760
In-stock
Maxim Integrated IC GATE DRVR 2CH 16NS 10TDFN - Obsolete Tape & Reel (TR) Inverting, Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) 6.5 V ~ 28 V Independent Low-Side 2 N-Channel MOSFET 2A, 4A 48ns, 32ns
MAX15025HATB+T
RFQ
RFQ
4,929
In-stock
Maxim Integrated IC GATE DRVR 2CH 16NS 10TDFN - Obsolete Tape & Reel (TR) Inverting, Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) 6.5 V ~ 28 V Independent Low-Side 2 N-Channel MOSFET 2A, 4A 48ns, 32ns
MAX15025GATB+T
RFQ
RFQ
3,153
In-stock
Maxim Integrated IC GATE DRVR 2CH 16NS 10TDFN - Obsolete Tape & Reel (TR) Inverting, Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) 4.5 V ~ 28 V Independent Low-Side 2 N-Channel MOSFET 2A, 4A 48ns, 32ns
MAX15024CATB+T
RFQ
RFQ
5,028
In-stock
Maxim Integrated IC GATE DRVR 1CH 16NS 10TDFN - Obsolete Tape & Reel (TR) Inverting, Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) 4.5 V ~ 28 V Single Low-Side 1 N-Channel MOSFET 4A, 8A 24ns, 16ns
MAX15024DATB+T
RFQ
RFQ
5,842
In-stock
Maxim Integrated IC GATE DRVR 1CH 16NS 10TDFN - Obsolete Tape & Reel (TR) Inverting, Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) 6.5 V ~ 28 V Single Low-Side 1 N-Channel MOSFET 4A, 8A 24ns, 16ns