STMicroelectronics PWD5F60 High Density Power Driver
STMicroelectronics PWD5F60 High Density Power Driver combines gate drivers and four N-channel power MOSFETs in a dual half-bridge configuration into a single, compact System-in-Package (SiP) device. The integrated power MOSFETs have a drain-source on resistance, or RDS(ON), of 1.38Ω and a drain-source breakdown voltage of 600V. The high side for the embedded gate drivers can be easily supplied by the integrated bootstrap diode. The high integration of the PWD5F60 Power Driver enables efficient drive loads in space contrained applications.
The PWD5F60 accepts a supply voltage (VCC) extending over a wide 10V to 20V range and includes Undervoltage Lockout (UVLO) protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions. The extended input range of the PWD5F60 allows easy interfacing with microcontrollers, DSP units, or Hall effect sensors. The PWD5F60 also embeds two uncommitted comparators for protection against overcurrent and overtemperature.
The device is available in a compact 15mm x 7mm x 1mm VFQFPN package.
Features
Power System-in-Package integrating gate drivers and high-voltage power MOSFETs
RDS(ON) = 1.38Ω
BVDSS = 600V
Configuration Options:
Full bridge
Dual independent half bridges
UVLO protection on low-side and high-side
3.3V to 15V compatible inputs with hysteresis and pull-down
Internal bootstrap diode
Uncommitted comparators
Adjustable dead-time
Bill of material reduction
Compact and simplified layout
Flexible design
Operating temperature range: -40°C to 125°C
15mm x 7mm x 1mm VFQFPN package
Applications
Industrial fans and pumps
Cooking hoods and gas heaters
Blowers
Industrial drives
Factory automation
Power supply units
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