LMG1210 Half-Bridge MOSFET and GaN FET Driver

Texas Instruments' LMG1210 is a 200 V, half-bridge MOSFET and gallium nitride field-effect transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that feature adjustable dead-time capability, ultra-small propagation delay, and 3.4 ns high-side/low-side matching to optimize system efficiency. The device features an internal LDO which ensures a gate-drive voltage of 5 V regardless of the supply voltage.

To achieve optimum performance in a variety of applications, the LMG1210 allows designers to select the best bootstrap diode to charge the high-end bootstrap capacitor. When the low side is turned off, the internal switch turns off the bootstrap diode, effectively preventing high-end bootstrap overcharging and minimizing reverse recovery charge. The extra parasitic capacitance on the GaN FET is minimized to less than 1 pF to reduce additional switching losses.

The LMG1210 has two control input modes, including Independent Input Mode (IIM) and PWM mode. In the IIM, each output is independently controlled by a dedicated input. In PWM mode, two complementary output signals are generated from a single input, and the user can adjust the dead time from 0 ns to 20 ns for each edge. The LMG1210 operates over a wide temperature range of -40°C to +125°C in a low-inductance WQFN package.